Model:uGmni-200E|Dry Etching System|Products|ULVAC, Inc.
Dry Etching System

Model:uGmni-200E

A versatile etching system that supports both single-chamber and multi-chamber configurations, offering cost performance and scalability for production scale.

Features

  • Equipped with a "star electrode" to prevent deposition on the RF input window.
  • Heating function enhances reproducibility and stability.
  • Uniformity control is possible by adjusting the RF distribution ratio to a dedicated inner and outer perimeter separated antenna with ISM-duo (optional).
  • A process chamber capable of handling gas flow rates up to twice that of our standard models (optional).
    High-temperature heating for the process chamber is selectable (optional).
  • Additional etching chambers and ashing chambers can be equipped.
  • The ashing chamber offers microwave water plasma treatment on a heated stage to prevent corrosion after metal etching.
  • The system’s simple structure ensures easy maintenance.
  • A dummy cassette and alignment mechanism can be added, enabling the system to support a variety of processes as a production tool.
  • Comprehensive support services, including cleaning, parts supply, maintenance, and training, are provided.

Applications

  • Compound semiconductors (LED, LD, VCSEL RF devices and communication devices), Power devices (IGBT, SiC)
  • Metal, Dielectric, Polymer, Gate electrode etching
  • Ferro electric material, Noble metal etching
  • Ferro magnetic material etching

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