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We provide dry etching technology to realize a trench structure that realizes miniaturization and low resistance of power devices.
Challenges
Control Trench shape
The bottom is rounded to prevent device destruction due to concentration of electrolysis on the corners of the bottom.
Damage to sidewalls
Damage to the surface affects device performance
Solutions
Realization of smooth side walls and round shape
Optimize etching conditions to control trench shape
Removing damage layer
The damaged layer formed by trench formation is removed by ultra-low speed etching and low temperature annealing.
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