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We provide Pt / PZT etching process with high selectivity to Pt which is the lower electrode. (Selection ratio: PZT / Pt> 5 @ 8inch,> 10 @ 6inch) It also provides high uniformity (<+/- 3% @ 8inch) that minimizes the amount of underground digging and precise endpoint detection.
Challenge
Adhesion to pattern side wall
Due to difficult-to-etch material, etching products tend to adhere to sidewalls
Selection ratio with lower electrode
The film configuration consists of a PZT film of several μm and a metal electrode of about 100 nm, making it difficult to process the 8 inch process leaving the lower electrode
Stable production
Stable production is difficult due to a decrease in EPD signal, etc.
Solution
Use of plasma source dedicated to PZT multilayer film
Achieved etching distribution of 3% or less. No Pt / PZT selectivity> 5 ＠ 8 inch wafer without side wall deposition (> 10 @ 6 inch wafer)
Minimize the amount of digging under each etching film by high uniformity and precise end point detection
Stable production is possible with hardware that does not reduce the EPD signal or the etching rate
6-8 inches for stable production
Etching Profile Uniformity of Pt/PZT Film @ 8inch
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Provide stable process to leave lower Pt on the entire surface of 8 inches
Material : Pt/PZT/Pt Mask : Photo Resist Size : Depth 100/3000/100nm ER : Pt > 200nm/min PZT > 150nm/min Selectivity : Resist/PZT > 0.6 PZT/Pt > 5.0 |
End point detecting results of various layers
Contact Us
Introduction of Etching system