SiC Trench etching

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We provide dry etching technology to realize a trench structure that realizes miniaturization and low resistance of power devices.

Challenges

Control Trench shape

Round shape is required at the bottom of the trench structure to avoid electrolytic concentration in high pressure resistance applications

Low etching rate

Since SiC is a hard and chemically stable material, it is difficult to achieve a high etching rate.

Selection ratio with SiO2 mask

Low selectivity with SiO2 mask requires thick SiO2 mask

 

Solutions

Realization of smooth side walls and round shape

Optimize etching conditions to control trench shape

Etching rate is more than 700nm/min

High selectivity ratio

A process that achieves both side wall smoothness and high selectivity

material SiC
mask SiO2
size W 1um, D 2.1um
ER 700nm/min
Selectivity >8.0

 

Contact Us

https://www.ulvac.co.jp/en/contact/elec_inquiry/

Dry Etching system

https://www.ulvac.co.jp/en/products/etching_system/