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We provide dry etching technology to realize a trench structure that realizes miniaturization and low resistance of power devices.
Challenges
Control Trench shape
Round shape is required at the bottom of the trench structure to avoid electrolytic concentration in high pressure resistance applications
Low etching rate
Since SiC is a hard and chemically stable material, it is difficult to achieve a high etching rate.
Selection ratio with SiO2 mask
Low selectivity with SiO2 mask requires thick SiO2 mask
Solutions
Realization of smooth side walls and round shape
Optimize etching conditions to control trench shape
Etching rate is more than 700nm/min
High selectivity ratio
A process that achieves both side wall smoothness and high selectivity
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