Dry Etching System
Model： NE-550EX
High-density plasma etching system featuring an Inductively Coupled Plasma (ICP) method with a static magnetic field (ISM). It adopts a single-wafer structure and comes standard with an LL chamber. This model offers a compact design and low cost, making it an ideal choice for research and development.
Features
- Magnetic field assistance enables the generation of low pressure, low electron temperature, and high-density plasma, allowing for a wide range of plasma control, from ion-based etching to radical-based etching, compared to other ICP methods.
- The RF input window features a "star electrode" to prevent deposition, along with a heating function, focusing on reproducibility and stability in the system design.
- The system’s simple structure ensures easy maintenance.
- A variety of options are available, including a cassette chamber, 200°C substrate heating ESC stage, and endpoint detection mechanism.
- The system uses the same chamber as the uGmni-200E, designed for production scale lines, offering flexibility to support diverse processes as a development tool.
Applications
- Compound materials (LED, LD, VCSEL, high frequency devices, communication devices and power devices)
- Metal, Dielectric, Polymer, Gate electrode etching
- Difficult-to-etch materials(ferroelectrics, precious metals, and magnetic films）
- Nanoimprint, NEMS, MEMS, various sensors
- Biochips, microfluidic device, photonic crystal etc.
Specifications
| Model | NE-550EX |
| Wafer loading | Single-wafer loading or cassette |
| Wafer Size(mm) | 〜Φ200 mm |
| Operating pressure (Pa) | 0.07〜6.7 |
| Uniformity within wafer/wafer to wafer | ±5% max. |
| Wafer chucking | Mechanical chuck or electrostatic chuck |
