Ion Implantation System
Model：SOPHI
A medium-current ion implantation system that maintains a top market share for power devices and IGBTs.
Features
- Ultra-thin wafers can be processed by direct transfer.
- Direct transfer of warped substrates and high-precision alignment of orientation flat are also possible.
- High-precision implantation is achievable with a parallel beam.
- For single ions, Model : SOPHI-200 can accelerate up to 200 kV, while model : SOPHI-260 can accelerate up to 260kV.
- Easy to maintain and low cost of ownership.
- Low energy implantation available from 5 kV as an option.
- Substrate size:Φ125mm,Φ150mm,Φ200mm.
Applications
- Semiconductor production
- Ultra-thin wafers process such as power devices, etc.
- R&D
- VCSEL
- SOI/LNOI
- MEMS
Specifications
| Model | SOPHI-200 | SOPHI-260 |
| Substrate size (mm) | Φ100～200 | |
| Energy | Up to 600keV | Up to 780keV |
| Max. beam current | 2500eμA | |
| Dopant | B、P、As、Si、Ge、Sb、In | |
