Ion Implantation System
Model： SOPHI-400
A high-energy ion implantation system capable of handling energy up to 1200 keV, holding the top market share for power devices and IGBTs.
Features
- Ultra-thin wafers can be processed by direct transfer.
- Direct transport of warped substrates and high-precision alignment of orientation flat are also possible.
- For single charge ions, Model:SOPHI-400 can accelerate up to 400 kV.
- High-precision implantation is achievable with a parallel beam.
- Easy to maintain and low cost of ownership.
- Low energy implantation available from 5 kV as an option.
Applications
- Power device manufacturing process, IGBT
- VCSEL
- SOI/LNOI
- MEMS
Specifications
| Model | SOPHI-400 |
| Substrate size (mm) | Φ125～Φ200 |
| Energy | Up to 1200keV |
| Max. beam current | 1300eμA |
| Dopant | P 、H |
