IGZO Target
ULVAC manufactures and sells IGZO targets, which are used in IGZO TAOS (transparent amorphous oxide semiconductors composed of In, Ga, Zn, and O). ULVAC is working to increase the density of the targets and reduce the number of partitions to minimize particles, while delivering comprehensive packages that include high-quality IGZO targets, sputtering systems, and processes for IGZO to most display manufacturers around the world. ULVAC has also succeeded in developing a large IGZO target, approximately three meters long. This large IGZO target is expected to provide a fundamental solution to the degradation of TFT properties.
In response to requests from display manufacturers, ULVAC has independently developed a high-mobility oxide semiconductor target, achieving a mobility approximately three times that of conventional IGZO targets (10 cm2/Vs).
Features
IGZO Target
- High quality target with increased density and reduced number of partitions.
- Reduced number of particles and stable membrane properties.
- Large mass-production machines enable mass production.
- Offering three-meter, large IGZO targets.
- Various production achievements with different In:Ga:Zn ratios and additive systems.
High Mobility
- ULVAC's original composition
- Amorphous oxide semiconductor with mobility approximately three times that of IGZO.
- Wide process margin considering mass production ( ULVAC Technical Journal)
Applications
- LCD, OLED and Next-generation Display