High-energy Ion Implanter SOPHI-400｜Ion Implantation System｜Products｜ULVAC, Inc.
Ion Implantation System

High-energy Ion ImplanterSOPHI-400

SOPHI-400 is a cluster type, high-energy ion implanter applicable to Max 1200 keV.

Features

  • Cluster type
  • Thin wafers Compatible.
  • Parallel beam
  • High energy: Max 1200 keV
  • Wafer size: up to 200mm

Applications

  • Power device manufacturing process, IGBT
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