A high-energy ion implantation system capable of handling energy up to 1200 keV, holding the top market share for power devices and IGBTs.
Model | SOPHI-400 |
Wafer Size(mm) | Φ125~Φ200 |
Energy | Up to 1200keV |
Max. beam current | 1300eμA |
Dopant | P, H |
This website use cookies to obtain and use access data to understand the convenience and usage of customers. If you agree to use cookies, click "I Accept".
[Privacy Plicy] [Cookie Policy]