Model: SOPHI-400|Ion Implantation System|Products|ULVAC, Inc.
Ion Implantation System

Model: SOPHI-400

A high-energy ion implantation system capable of handling energy up to 1200 keV, holding the top market share for power devices and IGBTs.

Features

  • Ultra-thin wafers can be processed by direct transfer.
  • Direct transport of warped substrates and high-precision alignment of orientation flat are also possible.
  • For single charge ions, Model:SOPHI-400 can accelerate up to 400 kV.
  • High-precision implantation is achievable with a parallel beam.
  • Easy to maintain and low cost of ownership.
  • Low energy implantation available from 5 kV as an option.

Applications

  • Power device manufacturing process, IGBT
  • VCSEL
  • SOI/LNOI
  • MEMS

Specifications

Model SOPHI-400
Wafer Size(mm) Φ125~Φ200
Energy Up to 1200keV
Max. beam current 1300eμA
Dopant P, H

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