IGBT Fabrication Flow

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ULVAC provides technologies such as ion implanters and sputtering equipment for the manufacturing process of power device IGBTs. Power device IGBT (Insulated Gate Bipolar Transistor) is an acronym for Insulated Gate Bipolar Transistor.

Power Device IGBT Process flow

	1. Substrate
	2. B+ Ion implantation Using Ion implantation equipment
	3. Mask insulated layer formed Using CVD Introduction of CVD system
	4. Mask insulated layer patterned Patterning insulated layer with etching and ashing
	5. P+ ion implantation Using Ion implantation equipment
	6.Trench formed Using etching equipment Introduction of Etching system
	7. Insulated layer formed Using CVD Introduction of CVD system
	8. Insulated layer patterned Patterning insulated layer with etching and ashing
	9. Emitter electrode formed Using sputtering or evaporation Introduction of Sputtering system
	10. P+ FS layer formed Using Ion implantation equipment Introduction of Ion Implanter
	11. B+(Collector) formed Using Ion implantation equipment Introduction of Ion Implanter
	12. Collector formed Using sputtering or evaporation Introduction of Sputtering system