Ion implantation for IGBT

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Introducing the ion implantation technology required for the IGBT process.

P+,N+ Field Stop layer

An ion implanter equipped with a plasma source IHC is used to form the P +, N + Field Stop layer. IHC is an abbreviation for Indirect Heat Current. The feature is that the filament is not directly exposed to the plasma surface, so it has a long life.

The principle is that thermions are emitted from the filament, which causes the cathode to collide. After that, electrons are emitted from the cathode, and while being reflected by the repeller, the electrons collide with the introduced gas and form plasma.

This mechanism is used in ULVAC’s ion implanter SOPHI-400.

N+ Field Stop layer

An ion implanter using the plasma source ECR is used to form the N + field stop layer.

ECR stands for Electron Cyclotron Resonance. The feature is that it can generate a relatively large number of multivalent ions including hexavalent. In addition, it is a specification that can obtain a sufficient beam current even with hexavalent.

This mechanism is used in ULVAC’s ion implanter SOPHI-400ECR.


Introduction of IGBT fabrication flow

Ion implantation lineup

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