Model: IMX-3500|Ion Implantation System|Products|ULVAC, Inc.
Ion Implantation System

Model: IMX-3500

An ion implantation system with a maximum energy of 200 kV, capable of handling wafer sizes up to Φ200mm, making it ideal for research and development at universities and similar institutions.

Features

  • The ion source can generate ions such as B, P, and As, using both gas sources and solid evaporation sources, which are easy to handle safely.
  • The HV terminal section is designed with the same configuration as mass production equipment, ensuring high reliability.
  • The system is equipped with a platen that accommodates up to Φ200mm, as well as irregular substrates.

Applications

  • R&D and small-scale production
  • MEMS

Specifications

Model IMX-3500
Wafer Size(mm) Up to Φ150 (compatible with Φ200, undefined substrate)
Energy 30~200keV(Option:3~200keV)
Max. beam current 11B+ 400μA(200keV)
31P+ 600μA(200keV)
Dopant B, P, As, Si, Ge, Sb, In

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