An ion implantation system with a maximum energy of 200 kV, capable of handling wafer sizes up to Φ200mm, making it ideal for research and development at universities and similar institutions.
Model | IMX-3500 |
Wafer Size(mm) | Up to Φ150 (compatible with Φ200, undefined substrate) |
Energy | 30~200keV(Option:3~200keV) |
Max. beam current | 11B+ 400μA(200keV) |
31P+ 600μA(200keV) | |
Dopant | B, P, As, Si, Ge, Sb, In |
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