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We provide a process that enables high-energy injection and high-temperature and low-temperature injection. We can also provide carbon cap technology that prevents substrate roughness due to Si evaporation during activation annealing.
Challenges
Both high-concentration and low-concentration injection
When SiC is injected at a high concentration, crystal defects occur and cannot be recovered by annealing, so treatment at high temperature is required. On the other hand, it is known that normal temperature injection has better characteristics for low concentration injection.
SiC thermal diffusion
Since SiC is difficult to diffuse heat, higher energy is required to inject it deeper.
Rough surface due to high temperature process
Since the activation temperature of SiC is 1600 to 1800 ° C, Si loss occurs and causes the problem of surface roughness.
Solutions
high-concentration and low-concentration injection
Equipped with Dual Platen that can instantly switch between high temperature 600 ℃ and normal temperature injection, achieving high throughput. High-temperature processing realizes process stability and transfer reliability at high temperatures by ULVAC’s original substrate temperature rise method.
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| In the case of high-concentration injection, the crystals do not recover even after annealing and transfer.。 | In the case of low concentration injection, the crystals are maintained even at room temperature. |
High energy injection
Covers energy from 10kV to 1.2MeV and can support a wide process range
SOne solution for high temperature process of SIC
ULVAC can provide total solution including Ion implantation, carbon cap, annealing process
