Ion Implantation System
Model： IMX-3500
An ion implantation system with a maximum energy of 200 kV, capable of handling wafer sizes up to Φ200mm, making it ideal for research and development at universities and similar institutions.
Features
- The ion source can generate ions such as B, P, and As, using both gas sources and solid evaporation sources, which are easy to handle safely.
- The HV terminal section is designed with the same configuration as mass production equipment, ensuring high reliability.
- The system is equipped with a platen that accommodates up to Φ200mm, as well as irregular substrates.
Applications
- R&D and small-scale production
- MEMS
Specifications
| Model | IMX-3500 |
| Wafer Size(mm) | Up to Φ150 (compatible with Φ200, undefined substrate) |
| Energy | 30～200keV (Option:3～200keV) |
| Max. beam current | 11B+ 400μA（200keV) |
| 31P+ 600μA（200keV) | |
| Dopant | B, P, As, Si, Ge, Sb, In, etc. |
