Ion Implantation System
Model： IH
A high-energy ion implantation system compatible with both high and room temperatures processes, designed for power devices and SiC devices.
Features
- Instant switching between high and room temperatures.
- Automatic continuous high-temperature processing implantation is supported.
- Supports up to 400 keV for single-charge ions , 800 keV for double-charge ions, and 1200 keV for triple-charge ions.
- High throughput
Dual Platen (High-Temperature Stage and Room-Temperature Stage)
＊Instant switching between the high-temperature stage and the cooling stage
Voltage Pulse Application to High-Temperature Electrostatic Chuck
＊Reduction of substrate damage caused by rapid heating (ULVAC patent)
Preheat chamber for shortened heating time - Chain implantation capability reduces the operator's workload.
- Compact and space-efficient design.
- Suitable for a wide range of applications from prototypes to mass production.
- Substrate size:Up to Φ150mm for IH-860PSIC, Φ200mm for IH-1200PSIC.
Applications
- SiC devices
- MEMS
Specifications
| Model | IH-860PSIC | IH-1200PSIC |
| Wafer Size（mm） | Up to Φ150 | Up to Φ200 |
| Beam energy (single charge) |
Max. 400keV | Max.400keV |
| Max beam current | Al+ 1300eμA Al++ 400eμA |
Al+ 2600eμA Al++ 800eμA N＋2000eμA |
| Dose range | 1E11~1E16 | 1E11~1E16 |
| Dopant | P, B, Ar, Al, N, As | P, B, Ar, Al, N, As |
