A high-energy ion implantation system compatible with both high and room temperatures processes, designed for power devices and SiC devices.
Model | IH-860PSIC | IH-1200PSIC |
Wafer Size(mm) | Up to Φ150 | Up to Φ200 |
Beam energy (single charge) |
Max. 400keV | Max.400keV |
Max beam current | Al+ 1300eμA Al++ 400eμA |
Al+ 2600eμA Al++ 800eμA N+2000eμA |
Dose range | 1E11~1E16 | 1E11~1E16 |
Dopant | P, B, Ar, Al, N, As | P, B, Ar, Al, N, As |
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