Model: IH|Ion Implantation System|Products|ULVAC, Inc.
Ion Implantation System

Model: IH

A high-energy ion implantation system compatible with both high and room temperatures processes, designed for power devices and SiC devices.

Features

  • Instant switching between high and room temperatures.
  • Automatic continuous high-temperature processing implantation is supported.
  • Supports up to 400 keV for single-charge ions , 800 keV for double-charge ions, and 1200 keV for triple-charge ions.
  • High throughput
    Dual Platen (High-Temperature Stage and Room-Temperature Stage)
    *Instant switching between the high-temperature stage and the cooling stage
    Voltage Pulse Application to High-Temperature Electrostatic Chuck
    *Reduction of substrate damage caused by rapid heating (ULVAC patent)
    Preheat chamber for shortened heating time
  • Chain implantation capability reduces the operator's workload.
  • Compact and space-efficient design.
  • Suitable for a wide range of applications from prototypes to mass production.
  • Substrate size:Up to Φ150mm for IH-860PSIC, Φ200mm for IH-1200PSIC.

Applications

  • SiC devices
  • MEMS

Specifications

Model IH-860PSIC IH-1200PSIC
Wafer Size(mm) Up to Φ150 Up to Φ200
Beam energy
(single charge)
Max. 400keV Max.400keV
Max beam current Al+ 1300eμA
Al++ 400eμA
Al+ 2600eμA
Al++ 800eμA
N+2000eμA
Dose range 1E11~1E16 1E11~1E16
Dopant P, B, Ar, Al, N, As P, B, Ar, Al, N, As

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