Sputtering targets for FPD manufacturing equipment | Materials | Product introduction | ULVAC
Materials

Sputtering Targets
for Flat Panel Display Applications

In the FPD (Flat Panel Display) market, we constantly work to maintain a stable, high-quality material supply. We do the following to ensure our customers have the stable, high-quality materials needed for flat-panel displays:
・We obtain materials from sources all over the world.
・ Our quality control facilities and system support large targets.
(supports G8 generation and even super-large glass substrates)

・We collaborate with the in-house research institute to ensure that ideal materials are provided to customer production processes.

Features

  • We support sputtering targets for all fields, including TFTs, OLEDs (LTPS: low-temperature polysilicon), and touch panels.
  • Ultrasonic defect testers ensure meticulous quality assurance. ULVAC has installed large ultrasonic test equipment to make meticulous defect inspections of materials and bondig inspections. Using this equipment has helped ULVAC drastically cut down on arcing during sputtering and deliver high quality targets.
  • ULVAC has installed bonding equipment near customers in various Asian countries to support  deposition of larger glass substrates and realized an all-inclusive target supply system, backed by high-reliability metal bonding technology. 
  • Low-particle targets.
  • Attaining high uniformity by adjusting the metal microstructure.

Cu-Mg-Al Alloy for Low-Resistance Copper Wiring

  • Ideal target for deposition forming in low-resistance wiring processes. The stacking structure uses a Cu-Mg-Al alloy as an adhesion layer and as an oxidation suppression barrier layer for pure copper film.
  • Wet etch processing is easy because the copper material is similar to the wiring layer material. Processing can also use an etching solution (single fluid) not containing hydrogen peroxide or fluoric acid.

Sputtering Targets for FPD

Target Material Purity
Ti 4N5
Cu & Cu alloy 4N
Ag & Ag alloy 4N
Si & SiO2 4N
Mo 3N5

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