Sputtering System
Model:SEGul-200
This system, equipped with ULVAC's proprietary RaSE (Radical assist Sputter Epitaxy) method, enables the epitaxial growth of GaN used for power device, optical device, and RF device applications. This technology addresses key challenges in GaN device fabrication, such as device design flexibility, cost, and environmental impact.
Features
- Film thickness & resistance distribution within ±10% (Φ200mm area).
- No special gas abatement system required as sputtering system.
- Up to 3 process chambers can be installed, supporting both development and production-scale operations.
- Compatible with substrates ranging from Φ50mm to Φ200mm.
RaSE Method
- Process temperature: 600 to 800℃
- n-type GaN growth through doping
- Gases used: Ar, N2
Applications
- Power device
- Communication device
- μLED