PE-CVD System
Model： uGmni-200C
This system features a single-wafer plasma CVD module mounted on the standard core of Model : uGmni. Compared to tray-type systems, it achieves low particle generation and high-quality thin film deposition.
Features
- Supports 27.12 MHz high-density plasma processes.
- Compatible with SiH4-based films: SiO2, SiNx, SiON, a-Si, and TEOS-based film:SiO2.
- Chamber cleaning available using NF3+Ar plasma.
- Substrate size：Up to Φ200mm.
Applications
- Power device: Seed and metal layer sputtering
- MEMS sensor: PZT sputtering and etching
- Optical device: VCSEL etching
- Packaging: Descum ashing
- Communication device: PE-CVD of insulating film and etching