Native Oxide Removal System
Model：RISE-300
The system is designed for the precise removal of native oxide in advanced semiconductor fabrication, supporting applications such as LSI deep-contact bottoms and other narrow, high-aspect-ratio pattern structures.
This system is compatible with 300mm wafers.
Features
- Dry etching with excellent uniformity (< ±5% per batch), enabling the highly reproducible removal of persistent native oxide layers, such as those on LSI deep-contact bottoms.
- Damage-free processing achieved through remote plasma and low-temperature operation.
- Reduces self-aligned contact resistance to 50% of conventional wet processes.
- Batch system capable of processing up to 50 × 300mm wafers per batch, ensuring high throughput and low Cost of Ownership (CoO).
- The design of the RISE-300 prioritizes ease of maintenance.
Applications
- Pre-cleaning for self-aligned contact (SAC) formation.
- Pre-cleaning for capacitor formation.
- Pre-cleaning for epitaxial growth.
Specifications
| Model | RISE-300 | |
| Plasma Source | Microwave Power Supply | |
| Configuration | EFEM + LL + PM | |
| Wafer Size | φ300mm | |
| Wafer Stage | Ceramic Board (50 wafers/batch) | |
| Pumping System | Mechanical booster pump +DRP | |
| Control System | FAPC+TFT Touch Panel | |
| Gas Supply | 3 lines | |