Sputtering Targets for Semiconductor Applications|Materials|Sputtering Targets|Products|ULVAC, Inc.
Sputtering Targets

Sputtering Targets
for Semiconductor Applications

Sputtering targets must meet ever tougher standards for high quality to produce sub-micron scale and wafer targets in ever larger sizes.
- Low particle
- Good film uniformity
- High usage efficiency
To develop and produce high quality sputtering targets, Ulvac carefully evaluates which manufacturing method to use for each material to meet the following product quality goals.


  • Low-particle targets
    ULVAC has developed sputtering targets that suppress generation of particles that can be the source of problems in the sputtering process.
    Gaseous elements are one factor in causing particle emissions especially in aluminum targets and we are working to lower emissions by utilizing a vacuum melting method in the refining and ingot purification processes.
  • Attaining high uniformity by adjusting the metal microstructure
    ULVAC uses manufacturing processes that ensure high uniformity and a fine metal microstructure in most of its targets for semiconductor products including high purity cobalt targets and titanium targets.
    Utilizing a fine metal microstructure having a high degree of uniformity for example allows uniform the magnetic flux leakage on the target surface of high purity cobalt targets.
  • Meticulous quality control system
    Integrated process manufacturing at ULVAC takes product characteristics and contours into account during production. Sophisticated analysis/evaluation system such as the GD-MS (glow discharge mass spectrometer) ensure purity along with a high level of quality.

GDMS Analysis/Comparison for Various Tungsten Targets

Target Sinter-W
Na ≤ 0.1
K ≤ 0.1
Mg -
Ca -
Al ≤ 1
Cr ≤ 1
Fe ≤ 1
Ni ≤ 1
Cu ≤ 1
Th ≤ 0.0005
U ≤ 0.0005
O ≤ 100
C ≤ 50


Sputtering Targets for Semiconductors

Application Field Materials Manufacturing Method Purpose of Use
Electrode materials W (5N) Powder sintering Gate area
Co(5N) Melting method Gate area
Ni(5N) Melting method Gate area
Ti(5N) Melting method Lynear, Barrier etc.
Various silicide(4N up) Powder sintering
Wiring Materials Al(5N, 5N5) & Al alloy such as AlCu
(5N, 5N5)
Vacuum melting method Inter conect
Cu(6N) Melting method Inter conect
Compound semiconductor materials Au, Au alloy(4N) Melting method Wiring
WSi(5N) Powder sintering Electrode
SiO2(4N,6N) Artificial/ natural quartz Insulating material
Mounting & wiring Al(5N, 5N5)& Al alloy(5N, 5N5) Vacuum melting method Wiring
Cu(4N) Melting method Wiring
Cr(3N) Powder sintering Barriers
Precious metal materials Melting method Wiring
TiW(4N up) Powder sintering Barriers
Ni(4N) Melting method Barriers
Capacitor materials BST Powder sintering DRAM/thin film capacitors
PZT Powder sintering FeRAM
Barrier materials Ti(4N5) Melting method
TiW(4N up) Powder sintering

Target Material for Mainstream 300mm Wafers

Target Material Al-0.5mass%Cu Ti Cu Ta W
Purity 5N5up
(low-U, Th specifications)
4N5up 6Nup 6Nup
(except for Nb and W)
Backing plate Material Aluminum or Copper Alloy Aluminum Alloy Aluminum Alloy Aluminum or Copper Alloy Aluminum alloy
Copper Alloy
Bonding Method Electron Beam Welding,
Part Structure,
or Metal Bonding
Diffusion Bonding Diffusion Bonding Diffusion Bonding Metal Bonding

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