Materials
Sputtering Targets
Sputtering Targets
for Semiconductor Applications
Sputtering targets must meet ever tougher standards for high quality to produce sub-micron scale and wafer targets in ever larger sizes.
- Low particle
- Good film uniformity
- High usage efficiency
To develop and produce high quality sputtering targets, Ulvac carefully evaluates which manufacturing method to use for each material to meet the following product quality goals.
Features
- Aluminum Sputtering Targets: Designed for semiconductor applications, these targets have reduced impurity metal components and gas components such as oxygen, which suppress particle generation during sputtering.
- High-Purity Targets for Semiconductor Applications (W, Co, Ti): These targets apply manufacturing processes that focus on the refinement and homogenization of the metal structure.
Example:
・High-Purity Cobalt Target: The refinement and homogenization of the metal structure minimize the variation in magnetic flux leakage on the target surface.
・Tungsten Target: It is possible to control the crystal grain size and reduce gas components according to customer requirements. - Quality Assurance: Managed by SPC (Statistical Process Control) management control.
Sputtering Targets for Semiconductors
| Application Field | Materials | Purpose of Use |
|---|---|---|
| Electrode materials | W (5N) | Gate area |
| WSi（5N） | Gate area | |
| Co(5N) | Gate area | |
| Ni(5N) | Gate area | |
| Ti(5N) | Barrier etc. | |
| Various silicide(4N up) | ||
| Wiring Materials | Al(5N, 5N5) & Al alloy such as AlCu (5N, 5N5) |
Interconnect |
| (5N, 5N5) | ||
| SiO2(4N,6N) | Insulating material | |
| Mounting & wiring | Al(5N, 5N5)& Al alloy(5N, 5N5) | Wiring |
| Cu(4N) | Wiring | |
| Cr(3N) | Barriers | |
| TiW(4N up) | Barriers | |
| Ni(5N) | Barriers | |
| Capacitor materials | BST | DRAM/thin film capacitors |
| PZT | FeRAM | |
| Barrier materials | Ti(4N5) | |
| TiW(4N up) |
Target Material for Mainstream 300mm Wafers
| Target Material | Al-0.5mass%Cu | Ti | W | WSi |
|---|---|---|---|---|
| Purity | 5N5up (low-U, Th specifications) |
5N | 5N | 5N |
| Backing plate Material | Aluminum or Copper Alloy | Aluminum Alloy | Aluminum or Copper or Copper Alloy | Aluminum or Copper or Copper Alloy |
| Bonding Method | Electron Beam Welding, Integrated Part Structure, or Metal Bonding |
Diffusion Bonding | Metal Bonding, Diffusion Bonding | Metal Bonding |