Materials
Sputtering Targets
Sputtering Targets
for Semiconductor Applications
Sputtering targets must meet ever tougher standards for high quality to produce sub-micron scale and wafer targets in ever larger sizes. - Low particle - Good film uniformity - High usage efficiency To develop and produce high quality sputtering targets, ULVAC carefully evaluates which manufacturing method to use for each material to meet the following product quality goals.
Features
- Aluminum Sputtering Targets: Designed for semiconductor applications, these targets have reduced impurity metal components and gas components such as oxygen, which suppress particle generation during sputtering.
- High-Purity Targets for Semiconductor Applications (W, Co, Ti): These targets apply manufacturing processes that focus on the refinement and homogenization of the metal structure.
e.g.) High-Purity Cobalt Target: The refinement and homogenization of the metal structure minimize the variation in magnetic flux leakage on the target surface.
e.g.) Tungsten Target: It is possible to control the crystal grain size and reduce gas components according to customer requirements. - Quality Assurance: Managed by SPC (Statistical Process Control) management control.
Sputtering Targets for Semiconductors
| Application Field | Materials | Purpose of use |
|---|---|---|
| Electrode materials | W （5N） | Gate area |
| WSi（5N） | Gate area | |
| Co（5N） | Gate area | |
| Ni（5N） | Gate area | |
| Ti（5N） | Barriers, etc. | |
| Various silicides (4N up) | ||
| Wiring Materials | Al (5N, 5N5) and Al alloys such as AlCu (5N, 5N5) | Interconnect |
| SiO2（4N、6N） | Insulating materials | |
| Mounting & wiring | Al (5N, 5N5) and Al alloys (5N, 5N5) | Wiring |
| Cu（4N） | Wiring | |
| Cr（3N） | Barriers | |
| TiW（4N up） | Barriers | |
| Ni（5N） | Barriers | |
| Capacitor materials | BST | DRAM/thin film capacitors |
| PZT | FeRAM | |
| Barrier materials | Ti（4N5） | |
| TiW（4N up） |
Target Material for Mainstream 300mm Wafers
| Target Material | Al-0.5mass%Cu | Ti | W | WSi |
|---|---|---|---|---|
| Purity | 5N5up (low U, Th specifications) | 5N | 5N | 5N |
| Backing Plate Material | Aluminum or Copper Alloy | Aluminum Alloy | Aluminum or Copper or Copper Alloy | Aluminum or Copper or Copper Alloy |
| Bonding Method | Electron Beam Welding, Integrated Part Structure, or Metal Bonding | Diffusion Bonding | Metal Bonding, Diffusion Bonding | Metal Bonding |