Etching System
A Batch System
A Batch System
to Remove Native OxideRISETM-300
The system is designed for the precise removal of native oxide in advanced semiconductor fabrication, supporting applications such as LSI deep contact bottoms and other narrow, high-aspect-ratio pattern structures.
This system is compatible with 300mm wafers.
Features
- Damage-free (remote plasma and low-temperature process)
- High throughput and low CoO
- Processing in batches of fifty wafers
- Superior uniformity of etching (5% or less per batch)
- Easy maintenance
- Small foot print compare to cluster type equipment
- 50% lower self-aligned contact resistance compared to current wet process
- The Smallest foot print
Applications
- Pre-cleaning for self-aligned contact (SAC) formation
- Pre-cleaning for capacitor formation
- Pre-cleaning for epitaxial growth
Specifications
| Model | RISE-300 | |
| Plasma Source | Microwave Power Supply | |
| Configuration | EFEM + LL + PM | |
| Wafer Size | φ300mm | |
| Wafer Stage | Ceramic Board (50 wafers/batch) | |
| Pumping System | Mechanical booster pump +DRP | |
| Control System | FAPC+TFT Touch Panel | |
| Gas Supply | 3 lines | |