Etching System
A Batch System
A Batch System
to Remove Native OxideRISETM-300
Batch type equipment of chemical dry cleaning for remoral of native oxide in Narrow and Deep-contact patterns of advanced semiconductor.
Features
- Damage-free (remote plasma and low-temperature process)
- High throughput and low CoO
- Processing in batches of fifty wafers
- Superior uniformity of etching (5% or less per batch)
- Easy maintenance (no side maintenance access is required)
- Small foot print compare to cluster type equipment
- 50% lower self-aligned contact resistance compared to current wet process
- The Smallest foot print
Applications
- Pre-cleaning for self-aligned contact (SAC) formation
- Pre-cleaning for capacitor formation
- Pre-cleaning for epitaxial growth
- Pre-cleaning for Co or Ni salicide
Specifications
| Model | RISETM-300 | |
| Plasma Source | Microwave Power Supply | |
| Configuration | EFEM + LL + PM | |
| Wafer Size | 300mm diameter | |
| Wafer Stage | Ceramic Board (50 wafers/batch) | |
| Pumping System | Etching Module:Mechanical booster pump +DRP | |
| Control System | FAPC+TFT Touch Panel | |
| Gas Supply | 3 lines | |
| Application | SAC, Capacitor, Epitaxial growth, Pretreatment for salicide | |
| Electricity | Main Power Supply 1 | AC±208V, 50/60Hz, 3phase118A, 41kVA |
| Main Power Supply 2 | AC±208V, 50/60Hz, 3phase83A, 28.6 kVA | |
| Pump Rack | AC200V, 50/60Hz, 3phase86.5A, 30kVA | |
| Cooling Water | Main System | 0.2 - 0.5MPa 20 - 25ºC 20L/min x 2lines |
| DRP / Chiller | 0.2 - 0.5MPa 20 - 25ºC 15L/min |
|
| Compressed Air | 0.4 - 0.7MPa | |
| N2 Gas | 0.6 - 0.9MPa | |
| Process gas | Chamber Vent, Pump Purge | 0.6 - 0.9MPa |
| Exhaust | Main System | 20m3/min |
| Exhaust for Gas Box (Combustible Gas Side) | 2.0m3/min | |
| Exhaust for Gas Box (Oxidizing Gas Side) | 0.3m3/min | |
| Exhaust for Pump Rack | 10.5m3/min | |