CVD System
Single-substrate
Single-substrate
Plasma CVD SystemsCMD Series
The CMD Series are single-substrate CVD systems for deposition of silicon oxide and nitride films using SiH4 or TEOS. A high-frequency (27.12 MHz) power supply enables high-quality film deposition.
Features
- Improvements in the reaction chamber structure and gas supply system enable long-term stable deposition rates for TEOS(SiO2) films.
- Unit drive systems can operate at higher temperatures than conventional process temperatures, and a new vacuum transfer robot has been developed to enable a stable transfer system.
- Use of a high-frequency (27.12 MHz) power supply creates high-density plasma, for a high deposition rate.
- Individual substrates can easily be managed using parameters such as deposition conditions.
- A heated reaction gas path enables evacuation of all equipment (up to discharging unit) in gas state. Elimination of piping traps reduces by-product adhesion and maintenance time.
Applications
- Low-temperature P-Si, α-Si TFTs
Specifications
| CMD- 450BHT | CMD- 650HT | CMD- 950 | ||
| Substrate size (mm) | 400X 500 Xt0.7 | 600 X 720 Xt0.7 | 730X920 Xt0.7-0.5 | |
| Chamber configuration | 1) Loading/ unloading chambers | 2 | 2 | 2 |
| 2) Heating chambers | 1 | 1 | 1 | |
| 3) Reaction chambers | 4 (3 if annealing chamber is mounted) | 4 (3 if annealing chamber is mounted) | 5 (4 if annealing chamber is mounted) | |
| 4) Transfer chambers | 1 (7-sided) | 1 (7-sided) | 1 (8-sided) | |
| 5) Evacuation system Loading/ unloading chamber Reaction chambers | Rotary + mechanical booster Dry + mechanical booster | Rotary + mechanical booster Dry + mechanical booster | Rotary + mechanical booster Dry + mechanical booster | |
| 6) Substrate transfer unit | Option | Option | Option | |
| Productivity | 65 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions) | 65 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions) | 75 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions) | |