CVD System
Model： CMD
Multi-chamber PE-CVD systems for the deposition of amorphous silicon, silicon oxide and nitride films using SiH₄, TEOS and other precursors.
Features
- High-reliability transport system for high-temperature processes
- Stable deposition rate over a long period of time
- Anneal chamber for high-temperature (Max 550℃) and good temperature distribution
Applications
- TFT (Thin-film transistor) for High Definition Display
- Touch sensor panel
Specifications
| Model | G4.5 | G5.5 | G6 | |
| CMD-950 | CMD-1500HT | CMD-1800HT | ||
| Substrate size (mm) | 730 × 920 | 1300 × 1500 | 1500 × 1850 | |
| Chamber configuration | 1) Loading/Unloading chambers | 2 | 1 | |
| 2) Heating chambers | 1 | |||
| 3) Transfer chambers | 1 | |||
| 4) Reaction chambers | Max 5 (Max 4 with heating chambers) |
Max 6 (Max 5 with heating chambers) |
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| High vacuum evacuation system | Dry pump + Mechanical booster pump | |||
| Substrate transfer system | Vacuum transfer robot （Double arm type) | |||