We provide dry etching technology to realize a trench structure that realizes miniaturization and low resistance of power devices.
… GaN Trench etching
Category: Power Device
SiC Trench etching
We provide dry etching technology to realize a trench structure that realizes miniaturization and low resistance of power devices.
… SiC Trench etching
Ion implantation for SiC
We provide a process that enables high-energy injection and high-temperature and low-temperature injection. We can also provide carbon cap technology that prevents substrate roughness due to Si evaporation during activation annealing.
Trench MOSFET fabrication flow
Power devices are expected as devices that achieve low power consumption. Until now, power devices used Si substrates, but due to their limited physical properties, the use of wide bandgap semiconductors such as SiC and GaN is expanding as next-generation substrates. … Trench MOSFET fabrication flow