Patterning SiN isolation film
Low damage etching is important to remove only SiN. It is possible to etch SiN while maintaining the etching rate by detecting the end point.
… Process Technology for GaN HEMT
Category: GaN HEMT
Forming Gate for GaN-HEMT
There are several gate structure patterns in GaN HEMTs, but all of them require very shallow machining.
GaN HEMT fabrication flow
GaN HEMT (High Electron Mobility Transistor) is a next-generation power semiconductor that has low operating resistance and high breakdown withstand voltage, and is expected to be applied to high-power and high-speed electronic devices.
… GaN HEMT fabrication flow