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Patterning SiN isolation film
Low damage etching is important to remove only SiN. It is possible to etch SiN while maintaining the etching rate by detecting the end point.
Etching S/D（Metal)
ULVAC can provide both processes of electrode film sputtering and electrode formation etching.
Forming VIA（Si or SiC)
ULVAC etching equipment realizes both Si and SiC at high rates
Sputtering Cu seed layer
ULVAC can achieve high adhesion by consistently performing Degas ➡ oxide film removal etching ➡ seed layer film formation.
