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ULVAC offers technical solutions for the production of power devices.
ULVAC is the industry leader in the delivery of systems for SiC and Si.
SiC
Si
High-temp Ion Implanter for SiC
IH-860DSIC
IH-860DSIC is high-volume and high temperature system specifically suited for the SiC industry.
Load-lock type Sputtering System
CS-200
Sputtering system CS 200 is for research & development and small production application.
Dry Etching System for Production
NE-5700/NE-7800
Multifilm Dry Etching sytem designed for high volume manufacturing. Flexible configuration with low cost of ownership.
Ashing Systems
Luminous NA Series
NA series ashing system is a multi-substrate flexible ashing system which can be used for next generation and wafer level packaging processes.
Cluster-type Sputtrering System
SME-200E
Cluster type system which can be used for various types of deposition.(Metal, PZT,BST, AIN, SiNx,AI203)
Supports transfer chamber and various types of depositions.
Batch-type High Vacuum Evaroration System
ei Series
Ei Series is a high vacuum evaroration system for the deposition of metal and oxide on a substrate.
Since the operation panel of this system has an integrated control function that realizes automated vacuum and deposition process, it is recommended for R&D use as well as for small-scale manufacturing.
Medium Current Ion Implanter
SOPHI-200/260
The SOPHI-260 system is built upon existing medium ion implanter technology. However, the system has been designed to reduce cost and still provide a high-quality system with parallel scan capability.
High-energy Ion Implanter
SOPHI-400
SOPHI-400, cluster type high-energy Ion Implanter, has no mass separator and supports thin wafers.
Low-acceleration and High-density Ion Implanter
SOPHI-30
SOPHI-30, low-acceleration and high-density ion implanter, is cluster type and supports thin wafers.
Backside Metalization Sputtering System
SRH Series
SRH Series is a high volume PVD system for the deposition of metallic films required in the power device, WL-CSP, UBM or similar applications.