Process Technology for WLP

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Introducing the sputtering, etching, and ashing technologies required for the WLP process.

Forming polymide(PI) fine Via

Forming a high aspect ratio Via structure by ashing


Seed metal deposition

ULVAC can introduce consistently process Degas ⇒ oxide film removal ⇒ Seed layer film formation. By doing it consistently, the adhesion of the Seed layer is also improved.


Etching Cu&Ti

Descum&Surface polishing

Remove ground residue by ashing

Footing removal for high aspect ratio Via

Footing can be removed by ashing even with a high aspect ratio



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