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Introducing the sputtering, etching, and ashing technologies required for the WLP process.
Forming polymide(PI) fine Via
Forming a high aspect ratio Via structure by ashing
Seed metal deposition
ULVAC can introduce consistently process Degas ⇒ oxide film removal ⇒ Seed layer film formation. By doing it consistently, the adhesion of the Seed layer is also improved.
Etching Cu&Ti
Descum＆Surface polishing
Remove ground residue by ashing
Footing removal for high aspect ratio Via
Footing can be removed by ashing even with a high aspect ratio
Desmear
