Introducing the sputtering, etching, and ashing technologies required for the WLP process.
Forming polymide(PI) fine Via
Forming a high aspect ratio Via structure by ashing
Seed metal deposition
ULVAC can introduce consistently process Degas ⇒ oxide film removal ⇒ Seed layer film formation. By doing it consistently, the adhesion of the Seed layer is also improved.
Remove ground residue by ashing
Footing removal for high aspect ratio Via
Footing can be removed by ashing even with a high aspect ratio