WLP is an abbreviation for Wafer-level Packaging, which is one of the mounting technologies expected as mobile devices such as smartphones become more sophisticated and thinner. ULVAC provides techniques such as sputtering, etching and ashing for the WLP manufacturing process.
… Wafer-level Packaging (WLP) Manufacturing
Process Technology Vox(IR sensor)
Introducing the Vox sputtering technology required for IR sensor production and the ashing technology required for sacrificial layer removal.
… Process Technology Vox(IR sensor)
Vox(IR sensor) fabrication flow
Infra-red sensor (IR-) is an important sensor for realizing visualization in the dark night, and it can detect the heat of the object, so it can visualize obstacles (animals with a heat source, etc.) even in the dark night.
… Vox(IR sensor) fabrication flow
Process technology for SAW device
Introducing the piezoelectric film processing technology required for SAW device production and ULVAC technology used for electrode formation.
… Process technology for SAW device
SAW Device Fabrication flow
A SAW device is a filter device that has a structure that excites surface acoustic waves with a thin film of piezoelectric material or a regular comb-shaped electrode formed on a substrate.
Process technology for BAW device
ULVAC provides the piezoelectric film processing technology and electrode formation technology required for BAW device production.
… Process technology for BAW device
BAW Device manufacturing
A BAW device is a filter that extracts electrical signals in a specific frequency band by using the bulk vibration of a piezoelectric material.
Process Technology for GaN HEMT
Patterning SiN isolation film
Low damage etching is important to remove only SiN. It is possible to etch SiN while maintaining the etching rate by detecting the end point.
… Process Technology for GaN HEMT
Forming Gate for GaN-HEMT
There are several gate structure patterns in GaN HEMTs, but all of them require very shallow machining.
GaN HEMT fabrication flow
GaN HEMT (High Electron Mobility Transistor) is a next-generation power semiconductor that has low operating resistance and high breakdown withstand voltage, and is expected to be applied to high-power and high-speed electronic devices.
… GaN HEMT fabrication flow