Power devices are expected as devices that achieve low power consumption. Until now, power devices used Si substrates, but due to their limited physical properties, the use of wide bandgap semiconductors such as SiC and GaN is expanding as next-generation substrates. … Power device trench type fabrication flow
In recent years, MEMS device technology has evolved further and has become indispensable for various sensors and actuators. … Piezoelectric MEMS fabrication flow
The world’s highest level PZT sputtered film can be stably formed. (Coating on CMOS: PZT film forming temperature <500 ℃)
Equipped with a multi-chamber, PZT full stack (upper and lower electrodes + PZT) can be formed consistently.
We provide Pt / PZT etching process with high selectivity to Pt which is the lower electrode. (Selection ratio: PZT / Pt> 5 @ 8inch,> 10 @ 6inch) It also provides high uniformity (<+/- 3% @ 8inch) that minimizes the amount of underground digging and precise endpoint detection. … PZT film etching for piezoelectric MEMS