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Sputtering System

Multi Chamber Type Equipment

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ENTRON N300 is the cluster type deposition system which equipped the process technology of next generation semiconductor. It offers the critical process of the next-generation semiconductor, such as “Cu Barrier Seed PVD for TSV”, “Aluminum Emitter Wiring PVD for Large Diameter Substrate Power Devices”, and “Aluminum Re-Distribution Layer PVD and Under Bump Metal PVD for High-Density Packaging”. Furthermore, all user will satisfied by the most environmentally-friendly concept as an aggregate of energy-saving technologies in ENTRON-series. 


  • Variety of process capability for advanced semiconductor devices
  • The single core platform which capables up to 6 modules integration offering an effective investment flexibility for users
  • Environmentally-Friendly Concept Design
  • Control system design applicable for Semiconductor Fab automation requirement
  • Environmental consideration
    Installing various energy saving functions and achieving 40% energy saving on the current model.
  • Equipped with the control system that complies with the next generation semiconductor Fab.
    The excellent thin film control and the EES compliance. Complies with the high advanced automation Fab.


  • Cu Barrier Seed PVD for TSV
  • Aluminum Re-Distribution Layer PVD for High-Density Packaging
  • Under Bump Metal PVD for High-Density Packaging
  • Aluminum Emitter Wiring PVD for Large Diameter Substrate Power
    Devices, etc.


Configuration Transfer system EFEM, Vacuum transfer module x1
Module L/UL module x2 + Max 5 process modules + Degas or cooling module
Wafer size 300mm diameter
Transfer robot Dual arm type high vacuum transfer robot "ELEC-RZ"
Control system FA-PC control (Cluser tool controller)
Pumping system Main pump LL module : DRP
Transfer module : Cryo pump or TMP+ Trap or DRP
Process module : Cryo pump or TMP (+ trap)
Roughing pump Roughing dry pump, TMP fore dry pump
Module Sputtering Sputter-down/ Rotary magnet cathode:
Conventional, LTS, SIS, Triple gun cathode
Heating Degas, H2 Anneal
Pre-clean ICP pre etching
Process gas line PVD: Max 4 lines, CVD: Max 14 lLines Etcher: Max 11 lines
Substrate Glass support wafer, Ultra-thin wafer
Throughput Mechanical through put: 80 wph (Double transfer)
Ultimate pressure Load lock <10Pa
Transfer <PVD:1.0x10E-4Pa
Module <3.0x10E-6Pa/
THK uniformity *1 300mm diameter <+/-5%
Process temp R.T -450 degrees C
Electricity 50Hz/60Hz, 3 phase, 200V
Cooling water 0.3 to 0.5MPa, Temp 20 to 25 degrees C,
For chiller: 120L/min
For He compressor: 15L/min
For DRP: 3L/min×units
Gas Gas for process: 0.1 to 0.3MPa
Gas for vent N2 purge:0.2 to 0.7MPa
N2 for DRP N2 purge:0.2 to 0.7MPa
Compressed pressure 0.50 to 0.7MPa
Energy saving function Standard equipment
Grounding A class
Option RGA:Qulee
EES:EDPMS(Equipment Engineering Systtem)

*1  Dependent on the film material.

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