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CMD Series

CVD System

Single-substrate Plasma CVD Systems
CMD Series

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cmd

The CMD Series are single-substrate CVD systems for deposition of silicon oxide and nitride films using SiH4 or TEOS. A high-frequency (27.12 MHz) power supply enables high-quality film deposition.

Features

  • Improvements in the reaction chamber structure and gas supply system enable long-term stable deposition rates for TEOS(SiO2) films.
  • Unit drive systems can operate at higher temperatures than conventional process temperatures, and a new vacuum transfer robot has been developed to enable a stable transfer system.
  • Use of a high-frequency (27.12 MHz) power supply creates high-density plasma, for a high deposition rate.
  • Individual substrates can easily be managed using parameters such as deposition conditions.
  • A heated reaction gas path enables evacuation of all equipment (up to discharging unit) in gas state. Elimination of piping traps reduces by-product adhesion and maintenance time.

Applications

  • Low-temperature P-Si, α-Si TFTs

Specifications

  CMD- 450BHT CMD- 650HT CMD- 950
Substrate size (mm) 400X 500 Xt0.7 600 X 720 Xt0.7 730X920 Xt0.7-0.5
Chamber configuration 1) Loading/ unloading chambers 2 2 2
2) Heating chambers 1 1 1
3) Reaction chambers 4 (3 if annealing chamber is mounted) 4 (3 if annealing chamber is mounted) 5 (4 if annealing chamber is mounted)
4) Transfer chambers 1 (7-sided) 1 (7-sided) 1 (8-sided)
5) Evacuation system Loading/ unloading chamber Reaction chambers Rotary + mechanical booster Dry + mechanical booster Rotary + mechanical booster Dry + mechanical booster Rotary + mechanical booster Dry + mechanical booster
6) Substrate transfer unit Option Option Option
Productivity 65 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions) 65 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions) 75 seconds/ substrate (for single- layer 300 nm SiN film under standard ULVAC conditions)

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