[Background/State of art]
Today many sensors such as accelerometers, gyros, and pressure sensors are widely used inside high performance smart phones, tablet PCs, and automobiles enabling the “Smart society” representing the IoT world. The increasing demand and the key element to enable this functionality, is the piezoelectric MEMS (Micro Electro Mechanical Systems) device, using a piezoelectric thin film material called PZT (lead zirconate titanate, Pb(Zr,Ti)O3). Examples of applications in use are: actuators for auto focus lenses on digital cameras, and inkjet heads for printers.
The future holds that, higher performance, multi – functional and smaller piezoelectric MEMS devices for the next generation of advanced sensor technology is rapidly expanding its applications by the integration with CMOS (Complementary Metal Oxide Semiconductor) devices. PZT, Piezo-electric MEMS is one of the most practical MEMS devices available today, however, the process temperature was an obstacle, to integrate the MEMS device directly onto a CMOS device. A CMOS device due to its nature, can only withstand a process temperature of 500degreesC or lower. A typical crystallization temperature for a PZT thin film is 600degreesC for sputtering and 700degreesC for Sol-Gel.
ULVAC has developed world`s first unique innovative technology allowing integration of the piezoelectric MEMS device onto a CMOS device, thus achieving highest level piezoelectric performance, withstand voltage reliability, and cycle performance. This is accomplished by utilizing unique sputtering technology with process temperature below 500degreesC.
[Comparison with conventional performance]
■For further information Press Release