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Development Prototype

We offer high level and diverse development prototype including process construction from sensors to biochip.

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Process
Technology
Materials
Film Deposition Sputtering Various materials(Al, Ti, Cr, Ni, Cu, Nb, Mo, Ag, Ta, W, Pt, Au etc.), dielectric materials(SiO2、PZT)
CVD SiO2, SiN, SiON, TEOS, a-Si
Vacuum Evaporation Various materials(Mg, Al, Si, Ti、V, Cr, Fe, Co, Ni, Cu, Ge, Zr, Nb, Mo, Pd, Ag, In, Sn, Ta, W, Pt, Au, Bi)
Compound(SiO2、TiO2, ITO、Ta2O5
Etching Dry etching Various metals, sacrifice layer etching
Wet etching HF, TMAH, KOH, Various materials wet etching
Thermal Oxidation Oxidization by precise temperature controlled furnace.
Annealing Annealig in various conditions
Photolithography Single and both side alignment available. (Single side lithography max.8 inch, double side lithography up to 4 inch.)
Sub-micron patterning by i-line stepper.
From Photomask fabrication to Finished Products.
Cleaning UV, RCA, etc.
Assembly Dicing Si, SiO2, SiC, sapphire, etc.
Measuring Mass spectrometry, 3 dimensional measurements available : (3D Laser Microscopy, SEM, Ellipsometry, Wafer Particle-monitor ..) Si, SiO2, metals applicable

Etching example (From left: quarts cone shape, optical waveguide, 300μ Si deep etching leaving an 1μm Si layer)
*The leftmost photograph is provided by Shizuoka University Mimura Research Lab

Ferroelectric PZT film
formation/etching

6 inch submicron pattern

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