Technology History

August 1952 The company was established. At the same time, Hayashi Chikara and Hashimoto Koichi from the Sagane Lab at Tokyo University and Shibata Hideo from Kumagai Lab joined us.
November 1954 The rotary cooler was developed.
September 1957 The 100 kg induced heating vacuum furnace was produced domestically.
September 1959 The "study on vacuum melting metal casting furnace using uranium and uranium alloy" supported by an atomic energy subsidy from the Science and Technology Agency was successful.
March 1961 The compact diffusion pump won the incentive award from the director-general of the Science and Technology Agency.
The "60 kW electron impact vacuum furnace" was completed, thanks to a subsidy from the Ministry of International Trade and Industry.
November 1962 The ultra high vacuum valve won the incentive award from the director-general of the Science and Technology Agency.
November 1963 The titanium casting valve won the Agency of Industrial Science and Technology director's award.
November 1965 The large-scale space chamber was delivered to the space research lab at Tokyo University.
March 1967 The low-speed electronic diffraction device won the gold prize at the Leipzig international trade fair.
November 1968 The electrical lead for superconductive magnets was successfully developed, which was commissioned by the New Business Development Body.
December 1968 The automatic leak test (ALT) system was developed.
October 1969 The low-frequency dissolution degasification furnace (25 tons) was completed for the first time in Japan.
January 1970 The mass-filter type mass spectrometer was developed.
February 1970 The world's largest plasticizer plant was completed.
October 1970 The high-frequency continuous sputtering system was developed.
January 1974 Transparent conductive film was developed.
October 1974 The world's largest vapor-phase dryer was completed.
December 1974 The pumping system for the atomic fusion laboratory was completed, which was to be delivered to the Japan Atomic Energy Research Institute, Tokai laboratory.
June 1975 The first domestic ion implantation system was developed.
October 1975 IBM in the U.S. placed a major order for the full automatic vacuum evaporation system.
April 1976 An ion carburizing system was developed.
October 1978 The cassette-to-cassette sputtering system was developed.
January 1979 The plasma CVD system was developed.
May 1980 The fully automatic helium leak detector was developed.
The photochemical smog chamber was developed and delivered to the Research Institute for Environmental Protection and received a letter of appreciation from the Minister of Construction.
September 1980 The super-sized vacuum heat treatment furnace for rockets was completed.
February 1982 The large current ion implantation system IM-80H was developed.
March 1985 The vacuum pumping system for the critical plasma tester (JT-60) was delivered to the Japan Atomic Energy Research Institute, Naka laboratory.
November 1985 Vacuum Metallurgical Co., Ltd. delivered a Ti alloy cast metal elbow casing, the heart of the H-II rocket engine.
December 1985 The world's first multi-chamber sputtering system MCH-9000 series was launched.
September 1987 The metal CVD system ERA-1000 won the IR-100 and received an award in Chicago.
December 1987 The magnetic levitation transport system was developed in collaboration with Yasukawa Electric Corporation.
May 1988 The sputtering system for the superconductive film deposition "SH series" was launched.
October 1988 The ashing system "UNA-2000" was developed.
May 1989 The sputtering system for the low-resistance ITO films "SDP series" was developed.
August 1989 Tsukuba Institute for Super Materials developed a "high-molecular thin film using vapor deposition polymerization."
January 1990 The Bank of Canada issued new 50-dollar bills with a bogus bill prevention device using our vacuum evaporation roll coater.
December 1991 The CERAUS series, a multi-chamber deposition system for ultra-high vacuum used in semiconductor manufacturing was launched.
January 1993 The vacuum degreasing cleaning system for de-chlorofluorocarbon/ethane was developed.
May 1993 The high-performance sputter ion pump for the extra/ultra-high vacuum "Acter Pump" was launched.
October 1993 The method to accurately measure the materials for extra high vacuum, which emit extremely fewer gases, and those emitted gases was developed.
September 1994 The low pressure long through sputter (LTS) method for the next-generation semiconductor processes was developed.
February 1995 The sputtering system for manufacturing the liquid crystal display panels "SMD-450" won the Nikkei Excellent Product of the Year '94.
April 1995 Fuji Susono plant obtained ISO 9001 certification.
September 1995 The helium leak detector "HELIOT 301" won the "1995 Good Design Product, Selected by the Ministry of International Trade and Industry."
July 1996 "IL-100," the ion implantation system for manufacturing the next-generation liquid crystal display panels, won the '96 Excellent Award of the Advanced Display of the Year.
April 1997 The helium leak detector "HELIOT" won the 27th New Machine Development award held by the Japan Society for the Promotion of Machine Industry.
A cooperative development contract regarding highly dielectric thin film deposition was concluded with Ramtron International Corporation, aiming for mass production of FRAM, a next-generation semiconductor memory.
May 1997 Three organic EL generators were developed and launched.
July 1997 The "MgO film evaporation system ECH series" for plasma displays won the '97 championship of the 2nd Advanced Display of the Year.
April 1998 The NLD plasma source high-density etching system "NLD-8000/800" was developed.
The Components Division obtained ISO 9001 certification.
July 1998 The Electronics Equipment Group, Electronics Equipment Division 1, Electronics Equipment Division 2, Control Solution Division, Purchasing Department, Delivery Department and other related departments obtained ISO 9001 certification.
The sputtering system for LCD manufacturing "SMD-850" won the '98 Excellent Award of the 3rd Advanced Display of the Year
VLSI Research, the semiconductor related audit corporation, appraised us as "the system supplier that has made the most outstanding improvements."
March 1999 The Ultra-high Vacuum Division and Control Equipment Division obtained ISO 9001 certification.
April 1999 Semiconductor Equipment Division 2 obtained ISO 9001 certification.
We tied up with Ramtron International Corporation to develop "a next-generation ferroelectric memory."
July 1999 The "plasma CVD system for low-temperature poly-silicon TFT production CMD-450BHT" won the '99 championship of the 4th Advanced Display of the Year.
The "multi-cathode sputter (MCS)" for barrier film deposition for the next-generation Cu wires and "CVD technologies for WN" were developed.
VLSI Research, the semiconductor related audit corporation, selected us as one of the "10 companies that achieved excellent customer satisfaction in 1999," meaning that we have won their prizes for two successive years.
November 1999 The Industrial Equipment Division obtained ISO 9001, which means all divisions and departments across the company were certified.
Sputter technology for the next-generation Cu wires "Self Ionized Sputtering (SIS)" was developed.
The inexpensive and compact metallization system for mass production, supporting 300 mm wafers, "ENTRON" was developed.
April 2000 Technical cooperation was established with Kodak and Sanyo Electric Co., Ltd. to develop organic EL display manufacturing equipment.
July 2000 The organic EL generator "SATELLA" won the championship of the 5th Advanced Display of the Year in the equipment sector.
VLSI Research, the semiconductor related audit corporation, selected us as one of the "10 companies that achieved excellent customer satisfaction in 2000," meaning that we have won their prizes for three successive years.
August 2000 The new model Low-K material was announced.
March 2001 Compact and inexpensive liquid crystal implantation/sealing equipment for large-scale liquid crystal panels was announced.
July 2001 The large-scale film deposition system using the Cat-CVD method was developed.
March 2002 The large-area high-intensity flat-faced lamp was developed.
June 2002 Visible light photocatalysis film deposition and evaluation systems were announced.
December 2002 Cu wiring technology using the bias modulation SIS (Self Ionized Sputtering) method was announced.
Ultra-high vacuum sputtering equipment for the mass production of TMR films for MRAM was developed.
Al filling technology using aluminum (Al) CVD technology was developed.
January 2003 The dry pump power saving attachment "ECO-SHOCK" won the "23rd Japan machinery Federation presidential prize" of The Japan Machinery Federation.
May 2003 Polyimide film coverage technology using vapor deposition polymerization was developed.
August 2003 The solid-state green laser anneal system for low-temperature poly-silicon/TFT was developed (with the "high-power 200W green laser oscillator" developed by Sanyo Electric Co., Ltd. mounted).
November 2003 The MEMS process line such as lithography was maintained and the integrated line from film deposition/etching to dicing and bonding was set up and MEMS foundry services were provided.
February 2004 A new license contract was concluded with JDS Uniphase Corporation.
April 2005 New products, the liquid crystal dropping and gluing system "V series," PDP panel function tester "BM series," ashing system "NA-1000/1300," etching system "ALBA," and wafer bump inspection system "IS-300/3300" were announced.
May 2005 The carbon nano tube growth system that allows the world's first vertical and selected growth on the board (for semiconductors) and the arc carbon nano tube (single wall type) production system were announced.
In the 5th awarding ceremony of the Japan Vacuum Industry Association, the "development of low-resistance ITO conductive film" won the FujiSankei Business i. president award and "contribution to vacuum system production using a Ti welding process" won the technique award.
July 2005 The multi-purpose single-chamber vacuum heat treatment system (FHB series) mounting our technology, the high purity gas shield method, was brought to the domestic market.
November 2005 ULVAC introduces two new models of ion implantation systems (SOPHI, IH‐860DSIC) into the power device market.
June 2006 Latest Type Double-Arm Vacuum Transfer Robot ULSTA-300 with throughput improvement was announced.
New chromatogram processor ChromatoDAQ II designed for RoHS compliance, compactness and high performance was announced.
July 2006 Launching the low k inter-layer insulating film materials and wafers with insulating film for next-generation LSI.
August 2006 Developed anti-corrosion treatment for Al alloy with little outgassing (Super AL-pika).
September 2006 Launched the sale of new-model sputtering equipment for automotive parts. Achieved high productivity by three-layer continuous processing, as well as space saving and environmental compliance.
Launched the Qulee (pronounced as "KLEE") Series, residual gas analysis/process gas monitor achieving ultra low-cost and pursuing facilitation and convenience.
Developed the new technology of manufacturing MEMS PZT piezoelectric devices.
Linear ion guns with improved initial discharge current characteristics launched.
Marketing of long-life radio-frequency (RF) ion guns commenced.
October 2006 Developed the technology of growing an SiGe epitaxial layer at low temperature
- Selective epitaxial SiGe application to SOI and source/drain possible -
Extended deployment of leading edge optical coating platform
November 2006 Launched the new-model QCM based Modecular Interaction Analyzer “AFFINIX Q series” AFFINIX QN
January 2007 Launched the new-model sputtering system jsputter “JSP-8000”
March 2007 NexPower Technology Corporation is going to enter the solar cell market. ULVAC made a package contract for the production systems.
April 2007 The “Sputtering system SDP-s series for the 8th generation or later liquid crystal CF/PDP” won the grand prize for the ADY2007 production system department.
June 2007 Developed a new film formation technology for high-integrated PCRAM
-GST (Ge2 Sb2 Te5)film embedding sputtering has been realized-
August 2007 Sunner Solar Corporation is going to enter the solar energy market. ULVAC made a package contract for the production systems.
Developed a new process technology for manufacturing magnetic heads for next-generation HDDs
October 2007 China Solar Power enters thin film solar cell market in China by forging strategic alliance with ULVAC, Inc. of Japan
November 2007 Launched the sale of NE-950, the dry etching system dedicated for LED/LD mass-production targets five times productivity
January 2008 Release of new models of inline sputtering systems supporting 8.5th to 10th generation CF substrates achieving high throughput and process stability
February 2008 Developed the Cu wiring process for TFT: adhesion and barrier performance improved by Oxygen-mixture sputtering
March 2008 Developed the carbon nanotube film formation system for 300-mm wafers
Developed and Launched the sales of "Magrise": a mass-production system for the world’s highest grade rare-earth permanent magnets, the first system ever to improve magnet performance while saving Dy
May 2008 Launched the sales of sputtering system for non-conductive metal coating
July 2008 Launched the sales of CEH-400BII,new type of centrifugal vacuum distillation system
November 2008 Launched the sale of LED mass-production-dedicated dry etching system NE-950EX: productivity up 140% over the current standard
December 2008 Introduced the high productivity resist/residue removal tool ENVIROTM-Xceed400
Developed the world’s first integrated mass production technology for thin-film lithium secondary batteries
Announced the establishment of world's first solar cell modules testing laboratory as an equipment manufacturer with the vooperation of TÜV Rheinland Japan Ltd.
January 2009 ULVAC’s Turnkey Production Line of a-Si Thin film Solar Cell Received a Nihon Keizai Shimbun Awards for Excellence in the 2008 Nikkei Superior Products and Services Awards
July 2011 Established the South Korea Institute for Super Materials as a research institute attached to ULVAC KOREA, Ltd. to enhance research and development in South Korea.
April 2015 ULVAC, Inc. and Robert Bosch GmbH Sign Basic Agreement for Joint Development of Piezoelectric Device (PZT) for MEMS

July 2015 Established Future Technology Research Laboratory.
March 2017 Dry Etching System "NA-1500" for 600mm Advanced Packaging Substrates --- NA-1500 provides uniform Descum process for large square substrate
June 2017 Dry Agreement Signed to Establish Joint Research Office with the Chinese Academy of Sciences’ Institute of Microelectronics
April 2018 Dry ULVAC to Develop and Launch the LS series of Dry Vacuum Pumps – High pumping speed combined with low power consumption –
November 2018 Established ULVAC-Osaka University Joint Research Laboratory for Future Technology in Graduate School of Engineering, Osaka University
February 2019 Invited lecture in SPIE
August 2019 ULVAC Launches Revolutionary PZT Piezoelectric Thin-film Process Technology and HVM Solution for MEMS Sensors /Actuators: Enabling Reliable, High-quality Film Production for Next Generation Devices,ULVAC: Advancing technologies to achieve smart societies