Backside Metalization Sputtering System
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・ | Applicable substrate size: φ125 to 200mm. |
・ | Capable of auto-transfer for Ultra-thin Si wafer up to 50μm thickness. |
・ | Up to 5 unique process recipes. |
・ | Sputter-Etching process developed by ISM. |
・ | Efficient water cooling mechanism by ESC method is available. |

・ Power device |
・ WL-CSP (seed layer of electrolytic plating) |
・ UBM (Barrier metal) |
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